Sr and Mn co-doped LaCuSO: A wide band gap oxide diluted magnetic semiconductor with TC around 200K

摘要

Here we report the synthesis of a bulk oxide diluted magnetic semiconductor(DMS) system La1-xSrxCu0.925Mn0.075SO (x=0, 0.025, 0.05, 0.075, and 0.1). As awide band gap p-type oxide semiconductor, LaCuSO satisfies all the conditionsforecasted theoretically to be a room temperature DMS. The Curie temperature(TC) is around 200K as x>0.05, which is among the highest TC record of knownbulk DMS materials up to now. The system provides a rare example of oxide DMSsystem with p-type conduction, which is important for formation of hightemperature spintronic devices.